Homogenization of zinc distribution in vertical Bridgman grown Cd0.96Zn0.04Te crystals |
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Authors: | J K Radhakrishnan B S Sunderseshu Meenakshi Srivastava G L Seth R Raman R C Narula R K Bagai |
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Affiliation: | (1) Solid State Physics Laboratory, Lucknow Road, Timarpur, 110 054 Delhi, India |
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Abstract: | One of the most pressing issues in the growth of high quality single crystal Cd
0.96
Zn
0.04
Te material, is to achieve homogenization of the high axial variation of Zn concentration, caused by the larger than unity
segregation coefficient of Zn in CdTe. This is achieved in our crystals (i) by thermal annealing of the CdZnTe crystal, which
redistributes the as grown Zn distribution by solid state diffusion of Zn (this solid state diffusion of Zn occurs at three
stages (a) during the growth when the solidified crystal is near to the melting point temperature, (b) during the post growth
annealing of the crystal at a high temperature and (c) during the cooldown to room temperature) and (ii) by the reduction
of Zn segregation during the growth stage by enhanced convective mixing of the melt, through a proper choice of ampoule and
furnace dimensions. By adopting suitable growth parameters and sufficient post growth annealing it has been possible to grow
Cd
0.96
Zn
0.04
Te crystals, which have nearly 75% of their fraction within 1% Zn concentration variation. |
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Keywords: | Bridgman growth CdZnTe Zn distribution solid state diffusion |
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