Improved process flow for buried channel fabrication in silicon |
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Authors: | Z Fekete A Pongrácz P Fürjes G Battistig |
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Affiliation: | (1) Research Institute of Technical Physics and Materials Science, P.O.Box. 49, 1525 Budapest, Hungary;(2) Budapest University of Technology and Economics, Műegyetem rkp. 3, 1111 Budapest, Hungary |
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Abstract: | The fabrication of microchannels using MEMS technology always attracted the attention of researchers and designers of microfluidic
systems. Our group focused on realizing buried fluidic channels in silicon substrates involving deep reactive ion etching.
To meet the demands of today’s complex microsystems, our aim was to create passive microfluidics in the bulk Si substrate
well below the surface, while retaining planarity of the wafer. Therefore additional lithographic steps for e.g. integrating
circuit elements are still possible on the chip surface. In this paper, a more economic process flow is applied which also
contains a selective edge-masking method in order to eliminate under-etching phenomenon at the top of the trenches to be filled.
The effect of Al protection on the subsequent etch steps is also discussed. Applying the proposed protection method, our group
successfully fabricated sealed microchannels with excellent surface planarity above the filled trenches. Due to the concept,
the integration of the technology in hollow silicon microprobes fabrication is now available. |
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