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Subboundaries in hcp4He crystals studied by SR X-ray topography |
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| Authors: | Izumi Iwasa Hideji Suzuki Takayoshi Suzuki Tetsuo Nakajima Ichiro Yonenaga Haruhiko Suzuki Hirokazu Koizumi Yuji Nishio Joji Ota |
| Affiliation: | (1) Foundation Research Laboratory, Fuji Xerox Co., Ltd., Ebina-shi, 243-04 Kanagawa, Japan;(2) Tokyo Engineering University Hachioji-shi, 192 Tokyo, Japan;(3) Institute of Industrial Science, University of Tokyo, Minato-ku, 106 Tokyo, Japan;(4) National Laboratory for High Energy Physics Tsukuba-shi, Photon Factory, 305 Ibaragi, Japan;(5) Institute for Materials Research, Tohoku University, Aoba-ku, Sendai-shi, 980 Miyagi, Japan;(6) Department of Physics, Faculty of Science, Kanazawa University, Kanazawa-shi, 920-11 Ishikawa, Japan;(7) Department of Physics, School of Science and Technology, Meiji University, Tama-ku, Kawasaki-shi, 214 Kanagawa, Japan |
| Abstract: | The internal structure of hcp4He crystals was studied by SR (synchrotron radiation) X-ray topography. Subboundaries in the crystals appeared as black or white bands in the X-ray topographs. In one of the hcp4He crystals, the subboundaries turned out to be flat planes perpendicular to the basal plane. They were small-angle tilt boundaries which consisted of basal edge dislocations. The dislocation spacing in one of the subboundaries was determined to be 800 nm and the total density of the boundary dislocations to be 2.6 × 105 cm–2. The subboundaries in another hcp4He crystal were curved and/or branching, indicating that the crystal was strained. |
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