Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy |
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| Authors: | Kikuchi A. Kaneko Y. Nomura I. Kishino K. |
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| Affiliation: | Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan; |
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| Abstract: | A remarkable threshold current density reduction (from 3.5 kA/cm/sup 2/ to 1.6 kA/cm/sup 2/) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GS-MBE) was obtained by introducing 50 pairs of GaInP(7.1 AA)/AlInP(7.1 AA) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.<> |
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