用于VLSI的SiO_xN_y薄膜的界面陷阱

采用雪崩热电子注入技术研究了用于VLSI的快速热氮化的SiO_xN_y薄膜界面陷阱。给出这种薄介质膜禁带中央界面陷阱密度随氮化时间的变化关系,观察到这种薄膜存在着不同类型的密度悬殊很大的电子陷阱。指出雪崩热电子注入过程中在Si/SiO_xN_y界面上产生两类性质不同的快界面态陷阱,并给出这两种陷阱在禁带中能级位置及密度大小关系;同时还给出禁带中央界面陷阱密度随雪崩注入剂量呈现弱“N”形变化关系,并对实验结果进行了讨论。

Interface Traps in SiO_xN_y Thin Film Used for VLSI

Interface traps in rapid thermal nitrided SiOxNy thin film used for VLSI have been studied by means of avalanche hot-electron injection technique. The variation relation-ship of the midgap interface trap desity in the dielectric thin film with the nitridation time is presented. Different kinds of electronic traps, existing in the thin film and having great dis-parity in their densities, have been observed. It is indicated that two kinds of fast interface traps, which have different properties, were generated in the Si/SiOxNy interface during avalanche hot-electron injection. The positions in forbidden band and quantitative density re-la tionship of these two fast traps are provided. A weakly "N" type variation of the midgap interface trap density with the avalanche injection dose is also indicated. Some discussions of these experimental results are given in this paper.