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关于金属磁记忆检测中背景磁场抑制的讨论
引用本文:王丹,徐滨士,董世运,董丽虹.关于金属磁记忆检测中背景磁场抑制的讨论[J].无损检测,2007,29(2):71-73,99.
作者姓名:王丹  徐滨士  董世运  董丽虹
作者单位:装甲兵工程学院,装备再制造技术国防科技重点实验室,北京,100072
摘    要:通过具体试验,对当前金属磁记忆检测中普遍采用的利用通道补偿的背景磁场抑制方法进行了验证。结果发现通道补偿法并不能真正去除背景磁场对金属磁记忆检测的影响;同时,进一步对背景磁场对金属磁记忆检测的影响进行了分析,指出了相关的影响因素,并提出利用有限元分析消除背景磁场对金属磁记忆检测的影响的方法。

关 键 词:金属磁记忆检测  背景磁场  通道补偿法
文章编号:1000-6656(2007)02-0071-03
收稿时间:2006-04-03
修稿时间:2006-04-03

Discussion on Background Magnetic Field Control in Metal Magnetic Memory Testing
WANG Dan,XU Bin-shi,DONG Shi-yun,DONG Li-hong.Discussion on Background Magnetic Field Control in Metal Magnetic Memory Testing[J].Nondestructive Testing,2007,29(2):71-73,99.
Authors:WANG Dan  XU Bin-shi  DONG Shi-yun  DONG Li-hong
Affiliation:National Key Laboratory for Remanufacturing, Academy of Armed Forces Engineering, Beijing 100072, China
Abstract:Investigations were made on the channel-compensated method of background magnetic field control, which was widely used in metal magnetic memory testing. Experimental results showed that the method did not eliminate the influence of background magnetic field. Moreover, the related influence factors were pointed out based on the above analysis, and a finite element analysis method for background magnetic field control in metal magnetic memory testing was put forward.
Keywords:Metal magnetic memory testing  Background magnetic field  Channel-compensated method
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