A proposed single grain-boundary thin-film transistor

A new Si thin-film transistor (TFT) has been proposed where only one grain-boundary exists at the center of channel, and the source and drain are within single grains with good crystallinity. The device fabricated by an excimer-laser crystallization method at the maximum temperature of 500°C, had the on-off current ratio ?10⁶ , the field-effect mobility ?330 cm²/Vs and the subthreshold swing ?1.1 V/dec, respectively, For the device processed at 800°C, they are >10⁶, >450 cm² /Vs and ?0.51 V/dec, respectively