Epitaxial growth on 4H-SiC by TCS as a silicon precursor |
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| Ji Gang, Sun Guosheng, Liu Xingfang, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Jinmin. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. Journal of Semiconductors, 2009, 30(9): 093006. doi: 10.1088/1674-4926/30/9/093006 Ji G, Sun G S, Liu X F, Wang L, Zhao W S, Zeng Y P, Li J M. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. J. Semicond., 2009, 30(9): 093006. doi: 10.1088/1674-4926/30/9/093006.Export: BibTex EndNote |
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| Authors: | Ji Gang Sun Guosheng Liu Xingfang Wang Lei Zhao Wanshun Zeng Yiping Li Jinmin |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | onship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32. |
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| Keywords: | 4H-SiC TCS epitaxial growth growth rate |
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