Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors |
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| Fu Xiaojun, Zhang Haiying, Guo Changxin, Xu Jingbo, Li Ming. Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors[J]. Journal of Semiconductors, 2009, 30(8): 084002. doi: 10.1088/1674-4926/30/8/084002 Fu X J, Zhang H Y, Guo C X, Xu J B, Li M. Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors[J]. J. Semicond., 2009, 30(8): 084002. doi: 10.1088/1674-4926/30/8/084002.Export: BibTex EndNote |
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| Authors: | Fu Xiaojun Zhang Haiying Guo Changxin Xu Jingbo Li Ming |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Department of Physics, University of Science and Technology of China, Hefei 230026, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | rease by almost half of the source-drain current (Ids, from 560 nA to 320 nA) due to drain-induced barrier lowering.Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications. |
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| Keywords: | ZnO nanowire back-gate suspended field-effect transistor ultraviolet radiation |
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