Improvements on high voltage performance of power static induction transistors |
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| Wang Yongshun, Li Hairong, Wang Ziting, Li Siyuan. Improvements on high voltage performance of power static induction transistors[J]. Journal of Semiconductors, 2009, 30(10): 104003. doi: 10.1088/1674-4926/30/10/104003 Wang Y S, Li H R, Wang Z T, Li S Y. Improvements on high voltage performance of power static induction transistors[J]. J. Semicond., 2009, 30(10): 104003. doi: 10.1088/1674-4926/30/10/104003.Export: BibTex EndNote |
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| Authors: | Wang Yongshun Li Hairong Wang Ziting Li Siyuan |
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| Affiliation: | School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
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| Abstract: | A novel structure for designing and fabricating a power static induction transistor (SIT) with excellent high breakdown voltage performance is presented. The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance, and to avoid the parallel-current effect in particular. Three ring-shape junctions (RSJ) are arranged around the gate junction to reduce the electric field intensity. It is important to achieve maximum gate-source breakdown voltage BVGS, gate-drain breakdown voltage BVGD and blocking voltage for high power application. A number of technological methods to increase BVgd and BVGs are presented. The BVGS of the power SIT has been increased to 110 V from a previous value of 50-60 V, and the performance of the power SIT has been greatly improved. The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum B VGS of the structure are also presented. |
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| Keywords: | static induction transistor parasitic effect breakdown voltage deep trench |
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