A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic |
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| Du Rui, Dai Yang, Chen Yanling, Yang Fuhua. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. Journal of Semiconductors, 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001 Du R, Dai Y, Chen Y L, Yang F H. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. J. Semicond., 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001.Export: BibTex EndNote |
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| Authors: | Du Rui Dai Yang Chen Yanling Yang Fuhua |
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| Affiliation: | Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved. |
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| Keywords: | VCO E-HEMT InP |
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