Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell |
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Authors: | Hu Yuehui Zhang Xiangwen Qu Minghao Wang Lifu Zeng Tao Xie Yaojiang |
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Affiliation: | Jingdezhen Ceramics Institution,Jingdezhen 333001,China |
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Abstract: | In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amorphous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/nc-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states. |
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Keywords: | p-n-n+ solar cell heterojunction back surface field computer simulation |
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