Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics |
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Authors: | Hu Aibin Xu Qiuxia |
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Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract: | MOS capacitors with hafnium oxynitride (HfON) gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method. A large amount of fixed charges and interface traps exist at the Ge/HfON interface. HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing. A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier. Using this method, well behaved capacitance-voltage and current-voltage characteristics were obtained. Finally hystereses are compared under different process conditions and possible causes are discussed. |
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Keywords: | Ge MOS capacitor HfON Ge oxides silicon nitride |
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