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Boundary condition and initial value effects in the reaction-diffusion model of interface trap generation/recovery
Authors:Luo Yong  Huang Daming  Liu Wenjun  Li Mingfu
Affiliation:1. State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China
2. State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 201203, China;SNDL, ECE Department, National University of Singapore, Singapore 117576, Singapore
Abstract:time, tn, is observed in the diffusion limited region of the RD model.
Keywords:reaction-diffusion model  interface-trap generation/passivation  negative bias temperature instability  charge pumping  direct-current current-voltage
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