Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure |
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| Authors: | Zhang Yang Zhang Renping Han Weihua Liu Jian Yang Xiang Wang Ying Li Chian Chiu Yang Fuhua |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy o |
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| Abstract: | A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly crosslinked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate. |
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| Keywords: | nanopillars electron-beam lithography negative PMMA proximity effect |
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