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An X-band GaN combined solid-state power amplifier |
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| Authors: | Chen Chi Hao Yue Feng Hui Yang Linan Ma Xiaohua Duan Huanmo Hu Shigang |
| Affiliation: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, School of Microelectronics,Xidian University, Xi' an 710071, China |
| Abstract: | 5 GHz, the variation of output power is less than 1.5 dB. |
| Keywords: | AIGaN/GaN HEMT solid-state power amplifiers output power gain compression power added efficiency |
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