|
|||||
|
|
Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions |
|
| Authors: | Chen Xiaofeng Chen Nuofu Wu Jinliang Zhang Xiulan Chai Chunlin Yu Yude |
| Affiliation: | 1. Key Laboratory of Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China 2. Key Laboratory of Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Laboratory of Microgravity,Institute of Mechanics,Chinese Academy of Sciences,Beijing 100080,China |
| Abstract: | uring crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. |
| Keywords: | chemical etching etch pit defect growth striations convection |
| 本文献已被 万方数据 等数据库收录！ | |
| 点击此处可从《半导体学报》浏览原始摘要信息 | |
| 点击此处可从《半导体学报》下载全文 | |