Microwave frequency detector at X-band using GaAs MMIC technology |
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| Zhang Jun, Liao Xiaoping, Jiao Yongchang. Microwave frequency detector at X-band using GaAs MMIC technology[J]. Journal of Semiconductors, 2009, 30(4): 044009. doi: 10.1088/1674-4926/30/4/044009 Zhang J, Liao X P, Jiao Y C. Microwave frequency detector at X-band using GaAs MMIC technology[J]. J. Semicond., 2009, 30(4): 044009. doi: 10.1088/1674-4926/30/4/044009.Export: BibTex EndNote |
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| Authors: | Zhang Jun Liao Xiaoping Jiao Yongchang |
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| Affiliation: | Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China;Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China;Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China |
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| Abstract: | The design,fabrication,and experimental results of an MEMS microwave frequency detector are presented for the first time.The structure consists of a microwave power divider,two CPW transmission lines,a microwave power combiner,an MEMS capacitive power sensor and a thermopile.The detector has been designed and fabricated on GaAs substrate using the MMIC process at the X-band successfully.The MEMS capacitive power sensor is used for detecting the high power signal,while the thermopile is used for detecting the low power signal.Signals of 17 and 10 dBm are measured over the X-band.The sensitivity is 0.56 MHz/fF under 17 dBm by the capacitive power sensor,and 6.67 MHz//μV under 10 dBm by the thermopile.respectively.The validity of the presented design has been confirmed by the experiment. |
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| Keywords: | MEMS frequency detector microwave power divider frequency measurement |
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