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Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors |
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| Authors: | Zhu Xiaming Wu Huizhen Wang Shuangjiang Zhang Yingying Cai Chunfeng Si Jianxiao Yuan Zijian Du Xiaoyang Dong Shurong |
| Affiliation: | 1. Department of Physics, Zhejiang University, Hangzhou 310027, China 2. Department of Physics, Zhejiang University, Hangzhou 310027, China;State Key Laboratory of Modern Optical Instrumentations, Zhefiang University, Hangzhou 310027, China 3. ESD Laboratory, Institute of Microelectronics and Photoelectronics, Zhefiang University, Hang Zhou 310027, China |
| Abstract: | Using NH3 as nitrogen source gas, N-doped ZnO (ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics. |
| Keywords: | ZnO N-doping resistivity photoluminescence thin film transistors |
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