Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film |
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| Tang Longjuan, Zhu Yinfang, Yang Jinling, Li Yan, Zhou Wei, Xie Jing, Liu Yunfei, Yang Fuhua. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film[J]. Journal of Semiconductors, 2009, 30(9): 096005. doi: 10.1088/1674-4926/30/9/096005 Tang L J, Zhu Y F, Yang J L, Li Y, Zhou W, Xie J, Liu Y F, Yang F H. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film[J]. J. Semicond., 2009, 30(9): 096005. doi: 10.1088/1674-4926/30/9/096005.Export: BibTex EndNote |
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| Authors: | Tang Longjuan Zhu Yinfang Yang Jinling Li Yan Zhou Wei Xie Jing Liu Yunfei Yang Fuhua |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Transducer Technology, Shanghai 200050, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Transducer Technology, Shanghai 200050, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Transducer Technology, Shanghai 200050, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Transducer Technology, Shanghai 200050, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Transducer Technology, Shanghai 200050, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Transducer Technology, Shanghai 200050, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | tchants for SiO2 and SiNx:H. A high etching selectivity of SiO2 over SiNx:H was obtained using highly concentrated buffered HE |
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| Keywords: | plasma enhanced chemical vapor deposition silicon nitride HF solution etch rate |
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