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Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes
Li Yingying, Cheng Chuanwei, Dong Xiang, Gao Junshan, Zhang Haiqian. Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes[J]. Journal of Semiconductors, 2009, 30(6): 063004. doi: 10.1088/1674-4926/30/6/063004 Li Y Y, Cheng C W, Dong X, Gao J S, Zhang H Q. Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes[J]. J. Semicond., 2009, 30(6): 063004. doi: 10.1088/1674-4926/30/6/063004.Export: BibTex EndNote
Authors:Li Yingying  Cheng Chuanwei  Dong Xiang  Gao Junshan  Zhang Haiqian
Affiliation:College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
Abstract:Using a low temperature hydrothermal synthesis method, ZnO nanorod networks have been directly grown across trenched Au microelectrodes arrays, which were modified with a layer of ZnO seeds. The characteristics of the current-voltage (Ⅰ-Ⅴ) and the photoresponse were obtained both in the dark and under ultraviolet illumination. The bridged nanorod network demonstrated a highly sensitive response to UV illumination in atmosphere at room temperature. It can be useful for nanoscale optoelectronic applications, serving as chemical sensors,biological sensors, and switching devices.
Keywords:semiconductors  nanorods  photodetector  sensors
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