|
|||||
|
|
(NH4)2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights |
|
| Authors: | Hu Aibin Wang Wenwu Xu Qiuxia |
| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
| Abstract: | ates originating from dangling bonds are passivated with S atoms. |
| Keywords: | Schottky barrier (NH4)2S treatment dangling bonds I-V |
| 本文献已被 万方数据 等数据库收录！ | |