A novel method using SiNW to measure stress in cantilevers |
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| Authors: | Jiang Yanfeng Wang Jianping |
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| Affiliation: | 1. Microelectronic Center,College of Information Engineering,North China University of Technology,Beijing 100041,China;Department of Electrical and Computer Engineering,University of Minnesota,Minneapolis,MN 55455,USA
2. Department of Electrical and Computer Engineering,University of Minnesota,Minneapolis,MN 55455,USA |
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| Abstract: | A silicon (SiNW) nanowire device, made by the bottom-up method, has been assembled in a MEMS device for measuring stress in cantilevers. The process for assembling a SiNW on a cantilever has been introduced.The current as a function of the voltage applied to a SiNW have been measured, and the different resistances before and after cantilever releasing have been observed. A parameter, η, has been derived based on the resistances. For a fixed sample, a linear relationship between η and the stress in the cantilever has been observed; and, so, it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress. |
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| Keywords: | SiNW stress cantilever MEMS |
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