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InP-base resonant tunneling diodes |
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| Authors: | Han Chunlin Chen Chen Zou Penghui Zhang Yang Zeng Yiping Xue Fangshi Gao Jianfeng Zhang Zheng Geng Tao |
| Affiliation: | 1. State Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China 2. Institute of Semiconductors,Chinese Academy of Sciences,Beijing 10083,China |
| Abstract: | We have fabricated Ino.53Ga0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semiinsulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated. |
| Keywords: | RTD electron beam lithography air-bridge |
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