The structure and maximal gain of CW-pumped GaP-AlGaP semiconductor Raman amplifier with tapers on both sides

GaP-AlGaP waveguide semiconductor Raman amplifiers (SRAs) tapered on both sides were fabricated by high-quality GaP-AlGaP liquid phase epitaxial growth using the temperature difference method with controlled vapor pressure (TDM-CVP), photolithography patterning, and reactive ion etching with PCl/sub 3/ gas. Although the finesse of the both-sides-tapered waveguide SRA is lower than previous values for straight or one-side-tapered waveguides, the CW-pumped gain was maximized, and a maximal gain of 4.2 dB was obtained. This letter presents the effect of tapered structures in SRA with CW pumping amplification.