Ferroelectric-Gate Field Effect Transistors Using (Y,Yb)MnO3/Y2O3/Si(111) Structures for 1T-Type FeRAMs |
| |
| Authors: | KOJI AIZAWA SOTA KOBAYASHI HIROSHI ISHIWARA KAZUYUKI SUZUKI KAZUMI KATO |
| |
| Affiliation: | 1. Precision and Intelligence Laboratory, Tokyo Institute of Technology , 4259-R2-19 Nagatsuta, Yokohama, Japan , 226-8503;2. Frontier Collaborative Research Center, Tokyo Institute of Technology , 4259-S2-9 Nagatsuta, Yokohama, Japan , 226-8503;3. Ceramics Research Institute, National Institute of Advanced Industrial Science and Technology , 2266-98 Anagahora, Nagoya, Japan , 463-8560 |
| |
| Abstract: | Fabrication and characterization of metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFIS FETs) using (Y,Yb)MnO3/Y2O3/Si structures were introduced for the first time. P-channel MFIS FETs were fabricated on n-type Si(111) substrates, in which an Y0.5Yb0.5MnO3(200 nm)/Y2O3(25 nm) structure was used as gate insulator. The Y0.5Yb0.5MnO3 and Y2O3 films were prepared by chemical solution deposition. A fabricated MFIS FETs showed the hysteresis loop due to spontaneous polarization in the ID-VGS characteristic, in which the memory window was about 0.9V when the applied gate voltage was swept between 8 V and ?8 V. Especially, the alternative drain current was retained after applying a single voltage pulse with a magnitude of +9 V or ?9 V. |
| |
| Keywords: | MFIS FET (Y Yb)MnO3 Y2O3 chemical solution deposition FeRAM |
|
|
