Effects of PbTiO 3 Seed Layer on the Characteristics of RF-Sputtered Pb(Zr 0.5 ,Ti 0.5 )O 3 Thin Films

The effects of seed layers on the characteristics of rf-sputtered lead zirconium titanate thin films were investigated. Prior to sputtering, PbTiO 3 seed layers (100 nm) were deposited onto the Pt/Ti/Si and Pt/Si substrates by sol-gel (spin coating) processing method. Structure-property relation was studied as functions of substrate temperature and sputtering conditions. Special efforts were given in optimizing the deposition parameters to prepare the films in the perovskite phase without post deposition annealing. Dielectric constant and loss tangent of the films were in the range 800-950 and 0.04 -0.06, respectively. Remanent polarization and coercive field were 23.1 w C/cm 2 and 75kV/cm, respectively, for the films without PbTiO 3 seed layer, where as the corresponding quantities for in situ -deposited perovskite Pb(Zr, Ti)O 3 films on PbTiO 3 seed layer were 28 w C/cm 2 and 65 kV/cm, respectively.