Effects of nitridation treatments for SBT/Ta2O5 stack gate capacitors |
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| Authors: | Hyungseob Min Changbae Jun Sung-Il Shin T Inoue Jinho Ahn Jiyoung Kim |
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| Affiliation: | 1. Department of Materials Engineering , Kookmin University , 861-1 JeongNeung-Dong, SungBuk-Gu, Seoul, 136-702, Korea;2. ULVAC/SINKU-RIKO Inc , 1–9–19, Hakusan, Midori-Ku, Yokohama, Japan;3. Department of Materials Engineering , Hanyang University , 17 Hang dang-Dong, Seong dong-Gu, Seoul, 133-702, Korea |
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| Abstract: | Abstract In this study, effects of ICP nitride treatments on characteristics of ferroelectric gate stack capacitor were investigated for FET type ferroelectric memory applications. Pt/SBT(200nm)/Ta2O5(20nm)/ Nitride/Si (MeFINS) structure capacitors show wide ΔV (memory window) of 1.06V under ±3V operation, while Pt/SBT(200nm)/ Ta2O5(20nm)/Si (MeFIS) capacitors without nitride treatments exhibit memory window of 0.60V. At the same time, an accumulation capacitance of the MeFINS structure device is higher than that of the MeFIS structure capacitor. This result implies that the ICP nitride treatment successfully suppresses a formation of low dielectric constant interfacial SiOx layer and alleviates a series capacitance problem. |
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| Keywords: | Ta2O5 SBT Nitridation MFIS-FET Nonvolatile memory |
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