High-deposition-rate growth of PZT thin films by reactive electron beam coevaporation using Ti/Zr alloy |
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Authors: | Shoichi Mochizuki Toshiyuki Mihara Tadashi Ishida |
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Affiliation: | Osaka National Research Institute , AIST, Ikeda, Osaka, 563, Japan |
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Abstract: | Abstract Lead zirconate titanate (PZT) thin films were prepared by coevaporation of titanium/zirconium alloy and lead metal with an electron beam gun. Each of evaporation rates was independently controlled by each quartz crystal thickness monitor. Titanium/zirconium alloy was used because of simplicity of chemical composition control. To promote oxidation of the films, a mixed gas of oxygen and ozone (5%) was used. When evaporation rates of titanium/zirconium alloy and lead metal were controlled moderately, perovskite phase PZT film was obtained on 50 nm-thick-PbTiO3-film at substrate temperature of 550°C. When atomic ratio of titanium/zirconium alloy was 50:50, chemical composition of the films was Ti:Zr = 9:1. Deposition rate was greater than 50 nm/min, which was much larger than that by the sputtering method. |
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Keywords: | keywords: Lead zirconate titanate thin film evaporation deposition rate alloy source |
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