Preparation and evaluation of sub-100 nm Pb(Zr,Ti)O3 films derived from modified sol-gel solutions for low-voltage operation of feram

Abstract

Sub-100 nm PbZr_0.3Ti_0.7O₃ (PZT) films were prepared on Pt/SiO₂/Si substrates from modified sol-gel solutions without using any seeding layers. Firstly, we studied Pb content [Pb/(Zr+Ti)] dependence of 90-nm-thick films. In the wide Pb content region of 108 – 125%, the films had perovskite-single-phase fine columnar grains with (111)-orientation and no voids. Electric properties were dependent on Pb content. The film with good microstructure, rectangular hysteresis, high remanent polarization (P_r), and low leakage current was gained for Pb content of 116%. Secondly, we studied film thickness dependence of PZT(116/30/70) films. Films from 90 down to 61 nm in thickness were prepared. We found that the sub-100 nm films with good microstructures could be prepared from the modified solutions. The sub-100 nm films had saturation voltage of 1.25 V and high P_r even at 1 V or less. In particular, a 61-nm-thick film had high.P_r of 17 μC/cm2 at 0.75 V.