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Preparation of SrBi2Ta2O9 ferroelectric thin film by rf magnetron sputtering |
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| Authors: | Koukou Suu Takeshi Masuda Yutaka Nishioka Noriakitani |
| Affiliation: | Institute for Super Materials, ULVAC Japan, Ltd. , 523 Yokota Sanbu, Sanbu, Chiba , 289-1226 , Japan |
| Abstract: | Abstract SrBi2Ta2O9 (SBT) thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by rf magnetron sputtering using a 12-inch ceramic SBT single target. It is found that several sputtering parameters such as argon (Ar) pressure and rf power were very effective to control the Bi content of SBT thin films which is essential for obtaining good ferroelectric properties. |
| Keywords: | SrBi2Ta2O9 ferroelectric thin film ferroelectric RAM rf sputtering compositional control |