A novel cell and array architecture for fet-type Ferroelectric nonvolatile memories |
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| Authors: | Wu-Quan Zhang Tian-Ling Ren Chun-Xiao Li Li-Tian Liu Jun Zhu Zhi-Jian Li |
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| Affiliation: | Institute of Microelectronics, Tsinghua University , Beijing, 100084, P.R.China |
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| Abstract: | Abstract A novel cell using a depletion type Metal-Ferroelectric-Semiconductor FET (MFSFET) as storage device is proposed. Its operations are based on a Metal/Ferroelectric/N-Si/P-Si (MFNP) structure. Read and write disturbance can be avoided in an array of such cells. The basic operations of device have been simulated. |
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| Keywords: | MFSFET depletion type ferroelectric memory write disturbance |
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