Electrical properties of paraelectric PLT(28) thin films deposited by dc magnetron sputtering |
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| Authors: | H H Kim D H Park K J Lim |
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| Affiliation: | 1. Department of Electronic Engineering , Doowon Institute of Technology , Kyeonggi-Do, Korea;2. Department of Electrical Engineering , Wonkwang University , Chunbuk, Korea;3. Department of Electrical Engineering , Chungbuk National University , Chungbuk, Korea |
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| Abstract: | Abstract Paraelectric Pb, La]TiO3 (PLT, La = 28 mol%) thin films were prepared by dc magnetron sputtering using a multi-element metal target. In order to crystallize the as-deposited PLT thin films into the cubic perovskite structure, a heat treatment was applied at annealing temperatures ranging between 450 and 750°C. The electrical measurements such as dielectric properties, polarization-electric field (P-E), and current-voltage (I–V) were investigated with the change of annealing temperature. The dielectric constant and dissipation factor of paraelectric PLT film annealed at 750°C were 1216 and 0.018, respectively. The charge storage density was approximately 12.5 μC/cm2. The leakage current density in PLT film annealed at 650°C was around 0.1 μA/cm2 at the electric field of 0.25 MV/cm. |
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| Keywords: | keywords: PLT DC magnetron sputtering charge storage density leakage current density |
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