Slow Dielectric Relaxation in Pb(Zr,Ti)O3 and (Ba,Sr)TiO3 Ferroelectric Thin Films |
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| Authors: | V K YARMARKIN |
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| Affiliation: | A.F Ioffe Physico-Technical Institute , St. Petersburg, Russia , 194021 |
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| Abstract: | An impedance analysis of Ni/Pb(Zr,Ti)O3/Pt thin-film structures based on measurements at the frequencies from 100 Hz to 100 MHz, along with the data of Grazing Angles XRD, TEM and photo-electric study, is used to obtain electronic structure of the PZT thin films deposited by sol-gel method on silicone substrates. Both slow capacitance relaxation and charging/discharging currents versus time under step-voltage excitation have been studied in (Ba,Sr)TiO3 thin films between SrRuO3 electrodes. |
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| Keywords: | Thin films PZT BSTO ferroelectrics dielectric relaxation |
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