Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

Abstract

Applying voltage between the conductive tip in atomic force microscopy (AFM) and bottom electrode through Pb(Zr, Ti)O₃ (PZT) films can cause switching of ferroelectric domains. Formation and imaging of ferroelectric domains in nanometer scale could be applied to develop the future ultrahigh-density memory device. Relevant issues, i.e. bit (induced ferroelectric domains) size dependence on applied voltage and pulse width, are discussed. The bit size showed a log-linear dependence on the pulse width and a linear dependence on the pulse voltage. Using the analysis of electric field distribution, the size of the induced bits under certain pulse voltage and width was estimated.