Reactive Ion Etching and Ion Beam Etching for Ferroelectric Memories |
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Authors: | TIAN-QI SHAO TIAN-LING REN LI-TIAN LIU JUN ZHU ZHI-JIAN LI |
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Affiliation: | Institute of Microelectronics, Tsinghua University , Beijing, China , 100084 |
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Abstract: | The fabrication of the FeRAM requires the development of etching processes for ferroelectric thin films and electrodes as well as deposition processes. But different etching methods have different impacts such as resolution and process-induced damages. In this paper, reactive ion etching (RIE) and ion beam etching (IBE) for ferroelectric thin films and Pt electrodes have been studied in details. Different silicon-based ferroelectric thin films and their corresponding electrodes have been etched successfully. To compensate the possible oxygen loss caused by the etching process, the samples should be annealed in O2 at 550°C for 30 min after RIE and IBE etching. |
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Keywords: | Ferroelectric thin film PZT sol-gel reactive ion etching (RIE) ion beam etching (IBE) |
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