I-V characteristics of a ferroelectric field effect transistor |
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| Authors: | Todd C Macleod Fat Duen Ho |
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| Affiliation: | 1. NASA, Marshall Space Flight Center , Huntsville, AL, 35812;2. Phone: (256) 544-1324 Fax: (256) 544-1324 E-mail: todd.macleod@msfc.nasa.gov;3. Electrical and Computer Engineering Department , University of Alabama in Huntsville , Huntsville, AL, 35899;4. Phone: (256) 890-6168 Fax: (256) 890-6168 E-mail: ho@ece.uah.edu |
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| Abstract: | Abstract There are many possible uses for ferroelectric field effect transistors. To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a FFET are described from empirical data. The effective gate capacitance and charge are derived from experimental data on an actual ferroelectric transistor. A general equation 1] for a MOSFET is used to derive the internal characteristics of the transistor. Experimental data derived from a Radiant Technologies2] FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material. Two polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse. The transistor is also simulated using a mathematical model from earlier research 3]. This model accurately predicts the I-V characteristics of the transistor. |
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| Keywords: | ferroelectric transistor I-V characteristics |
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