METAL-FERROELECTRIC-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR NAND GATE SWITCHING TIME ANALYSIS |
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| Authors: | THOMAS A. PHILLIPS TODD C. MACLEOD FAT D. HO |
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| Affiliation: | 1. National Aeronautics and Space Administration , Marshall Space Flight Center , Huntsville, Alabama, 35812, USA;2. Department of Electrical and Computer Engineering , The University of Alabama in Huntsville , Huntsville, Alabama, 35899, USA |
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| Abstract: | ABSTRACT Previous research investigated the modeling of a NAND gate constructed of n-channel Metal-Ferroelectric-Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. |
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| Keywords: | MFSFET FFET ferroelectric transistor logic gate NAND gate |
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