The Effect of La-Doped Bi4Ti3O12 Buffer Layer on Crystallinity and Ferroelectric Properties of PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 Multilayered Thin Films |
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| Authors: | Jianjun Li Xinyi Wen Yunyi Wu Jun Yu |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics , University of Electronic Science and Technology of China , Chengdu, 610054, China;2. Department of Electronic Science and Technology , Huazhong University of Science and Technology , Wuhan, 430074, China;3. Department of Electronic Science and Technology , Huazhong University of Science and Technology , Wuhan, 430074, China |
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| Abstract: | PbZr0.58Ti0.42O3 (PZT) ferroelectric thin films with Bi3.25La0.75Ti3O12 (BLT) buffer layer of various thickness were fabricated on Pt/TiO2/SiO2/p-Si(100) substrates by rf-magnetron sputtering method. The pure PZT film showed (111) preferential orientation in the XRD patterns, and the PZT/BLT films showed (110) preferential orientation with increasing thickness of the BLT layer. There were no obvious diffraction peaks for the BLT buffer layer, for its thin thickness in PZT/BLT multilayered films. There were the maximum number of largest-size grains in PZT/BLT(30 nm) film among all the samples from the surface images of FESEM. The growth direction and grain size had significant effects on ferroelectric properties of the multilayered films. The fatigue characteristics suggested that 30-nm-thick BLT was just an effective buffer layer enough to alleviate the accumulation of oxygen vacancies near the PZT/BLT interface. The comparison of these results suggests that the buffer layer with an appropriate thickness can improve the ferroelectric properties of multilayered films greatly. |
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| Keywords: | Ferroelectric thin films buffer layer PbZr0 58Ti0 42O3 Bi3 25La0 75Ti3O12 |
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