STRUCTURAL AND ELECTRICAL PROPERTIES OF (BaxSr1-x)TiO3 THIN FILMS PREPARED BY A SOL-GEL METHOD |
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| Authors: | J K KIM S S KIM W J KIM J K CHUNG I -S KIM J -S SONG |
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| Affiliation: | 1. Institute of Basic Science, Changwon National University, Changwon , Kyungnam, 641-773, South Korea;2. Department of Physics , Changwon National University , Changwon, Kyungnam, 641-773, South Korea;3. Korea Electrotechnology Research Institute , Changwon, Kyungnam, 641-120, South Korea |
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| Abstract: | ABSTRACT BaxSr1-xTiO3(BST) thin films with x = 0.5, 0.6, 0.7 and 0.8 were fabricated on p-type Si(100) substrates by a sol-gel spin coating method. All samples show the perovskite polycrystalline structures without the pyrochlore phase and have dense surface texture and crack-free uniform microstructures. The C-V characteristics of the BST thin film/p-type Si(100) capacitors exhibit clockwise hysteresis loops and also clearly show regions of accumulation, depletion and inversion corresponding to those of metal-ferroelectric-semiconductor structures. Furthermore, a constant memory window has been observed through the entire frequency ranges from 1 kHz to 10 MHz. |
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| Keywords: | BST thin films Sol-gel deposition MFS structures C-V characteristics |
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