Characterization of Pb(Zr,Ti)O3 thin films on SOI prepared by excimer laser deposition |
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| Authors: | Lirong Zheng Yiqing Chen Shunkai Zhang Weigen Luo Chenglu Lin |
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| Affiliation: | 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences , Shanghai, 200050, P.R. China;2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences , Shanghai, 200050, P.R. China;3. Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai, 200050, P.R. China |
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| Abstract: | Abstract Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films were prepared by pulsed excimer laser deposition on Silicon-on-Insulator (SOI) substrates with and without an electrode. Their properties can be improved by rapid thermal annealing, based on the structural and interfacial characteristics analysis by X-ray diffraction, Rutherford backscattering spectroscopy and automatic spreading resistance measurements. The thin films were revealed of to be polycrystalline perovskite structure with mainly ?100? and ?110? orientations; the crystallite size and the structure are dependent on the annealing time. The PZT thin films did not interact with the top silicon layers of SOI, and the composition was on the tetragonal side of the morphotropic phase boundary in the PbTiO3-PbZrO3 phase diagram. |
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| Keywords: | keywords: Negative temperature coefficient of resistivity (NTCR) (Pb1?xSrx)TiO3 V-shape PTCR donor level trap level Curie temperature |
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