Forming gas annealing effects on the microstructure and ferroelectricity of SrBi2Ta2O9 thin films prepared by metalorganic decomposition |
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Authors: | Tao Yu Dong-Sheng Wang Di Wu Ai-Dong Li Xin-Hua Zhu An Hu |
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Affiliation: | 1. National Laboratory of Solid State Microstructures &2. Center for Advanced Studies in Science and Technology of Microstructures , Nanjing University , Nanjing, 210093, P. R. China |
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Abstract: | Abstract Ferroelectric SrBi2Ta2O9(SBT) thin films prepared by metalorganic decomposition (MOD) method were annealed in forming gas (5% hydrogen + 95% nitrogen) at different temperatures for 60 min. SEM analysis results showed that an amount of columnar structures appeared on SBT surface when the annealing temperature was up to 450°C. When the annealing temperature raised up to 500°C, these columnar structures grew along one dimension and changed into wire structures. The EDX micro-area mapping analysis result showed that Bi was concentrated in the columnar or wire structures on SBT surface. The ferroelectric property analysis results showed that the hysteresis loops still existed after 5 min forming gas processing (350°C or 400°C), but when the annealing time was longer than 10 min, the resistance of the SBT samples became too low to measure the hysteresis loops. |
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Keywords: | ferroelectric thin film SrBi2Ta2O9 forming gas annealing |
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