Improvement of the electrical properties of PZT thin films using TiO2 buffer layer |
| |
Authors: | Kwangbae Lee Byung Roh Rhee Chanku Lee |
| |
Affiliation: | 1. Department of Computer &2. Electronic Physics , Sangji University , Woosandong 660 Wonju, Kangwondo, 220-702, Korea |
| |
Abstract: | Abstract Thin TiO2 layers were sputter-deposited on Pt/Ti/SiO2/Si wafers, as buffer layers for PZT thin film capacitors. It was found that TiO2 buffers of less than 4-nm-thickness could assist in obtaining highly uniform PZT thin films with no second phase. The leakage current behaviors of the PZT based capacitor are improved, while retaining the ferroelectric properties of PZT thin films such as remanent polarization and coercive field. In addition, the uniform distribution of oxygen in PZT on TiO2/Pt indicates that the TiO2 buffer layer act as a barrier for lead-platinum reaction, as well as for oxygen diffusion. |
| |
Keywords: | TiO2 buffer PZT thin films diffusion barrier leakage current |
|
|