Mocvd growth and characterization of PbTiO3 thin films on Pt/Ti/SiO2/Si substrates |
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| Authors: | M. P. Moret S. A. Rössinger P. R. Hageman S. I. Misat M. A. C. Devillers H. Van Der Linden |
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| Affiliation: | University of Nijmegen, Research Institute for Materials , Toernooiveld 1, 6525ED, Nijmegen, The Netherlands |
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| Abstract: | Abstract PbTiO3 thin films were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on 6′′ platinized Si wafers. In a first stage of investigation, the quality of the platinum surface was correlated with the substrate temperature and the composition of the atmosphere of the warming-up procedure in the reactor. The Pt reflectivity and the surface roughness were clearly modified by higher temperatures and by oxygen environments, though no clear diffusion mechanisms could be observed with Auger. In a second stage of investigation, the growth of PbTiO3 was studied. Using a standard PbTiO3 growth procedure, we studied the influence of substrate temperature and gas phase composition. Below 650°C, PbO appears as the main phase; at 650°C, PbTiO3 and PbO coexist; and at 700°C, only PbTiO3 is detected. The morphologies were examined by SEM / AFM and the roughness at the interface was studied by ellipsometry. |
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| Keywords: | MOCVD PbTiO3 (PT) polycrystalline growth substrate |
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