The Modeling and Calculation of One Transistor Memory Devices |
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Authors: | Qingfeng Li |
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Affiliation: | Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15217 |
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Abstract: | Metal/Ferroelectrics/Metal/Insulator/Si (MFMIS) and Metal/Ferroelectrics/ Insulator/Si (MFIS) one-transistor devices are being proposed for non-volatile memory applications. In order to determine the basic theory of one-transistor memory devices, we use equivalent circuits to model and calculate the basic properties of one-transistor memory devices. The capacitance of MFMIS and MFIS capacitors, memory windows, operation voltages, threshold voltages, and both switching and retention properties of one-transistor memory devices have also been calculated. According to the modeling and calculation, the ferroelectric materials with lower dielectric constant (?), low polarization (PR), appropriate coercive field and square hysteresis loop are required for one-transistor memory devices and low voltage applications. High dielectric constant insulator materials may improve the performance of one-transistor memory devices. In addition, the effects of depolarization fields, leakage current, and defect density on the switching and retention properties of one-transistor memory devices are also calculated. Based on the modeling and calculation, the retention problem dealing with depolarization fields and leakage current is a big challenge for one-transistor memory devices. |
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Keywords: | Ferroelectrics 1T FeRAM modeling equivalent circuit |
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