Mocvd process model for deposition of complex oxide ferroelectric thin films

Abstract

Thin complex oxide films, such as ferroelectrics, pyroelectrics, waveguides, superconductors, MEMS/MOEMS and piezoelectrics are experiencing rapid growth in a wide variety of commercial markets. In particular, ferroelectrics as used in IC cards, embedded memories with micro-controllers, stand-alone memories, and other ASIC applications, require deposition by a technique that is compatible with deep sub-micron advanced geometry IC integration. Metal Organic Chemical Vapor Deposition (MOCVD) is the deposition method of choice for achieving conformal uniform (composition and thickness) contiguous pin hole free thin films over the challenging sub 0.2 micron geometry topology necessary for implementing advanced devices. MOCVD is free of the physical limitations that produce film defects associated with other liquid source and physical vapor deposition techniques. Of the different MOCVD approaches to complex oxide film deposition, we have found rotating disk reactor (RDR) MOCVD to be the most versatile and capable of producing uniform films efficiently. Using computational fluid dynamic methods, a process model for optimizing the multiple process parameters of RDR-MOCVD, single and multiple wafer production tools, has been developed. The models developed are compatible with plasma-assist, single or multiple precursor and graded composition deposition of films. The developed hardware and model have been combined to maximize thin oxide film properties. SMI modeled RDR MOCVD methodology and film results are presented.