High frequency response of Bragg reflector type film bulk acoustic wave resonator |
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Authors: | Ju-Hyung Kim Si-Hyung Lee Jin-Ho Ahn Jeon-Kook Lee |
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Affiliation: | 1. Thin Film Technology Research Center, KIST , Seoul, 136-791, Korea;2. Department of Materials Science and Engineering , Hanyang University , Seoul, 133-791, Korea;3. Thin Film Technology Research Center, KIST , Seoul, 136-791, Korea;4. Department of Materials Science and Engineering , Hanyang University , Seoul, 133-791, Korea |
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Abstract: | Abstract We fabricated a Bragg reflector type FBAR using AlN piezoelectric with quarter wavelength thickness, where the Bragg reflector was composed of W-SiO2 pairs. By numerical simulation considering actual acoustic losses of each layer, we analyzed the frequency response of the resonator and could explain it using an equivalent circuit with parasitic elements. The Effective electromechanical coupling constant (K 2 eff ) and the Quality factor (Qs ), figures of merit of the resonator, were about 1.1% and 307, respectively. |
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Keywords: | Bragg reflector FBAR AlN |
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