Preparation of SrBi2(Ta,Nb)2O9 thin films by rf sputtering for ferroelectric memory production |
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| Authors: | Takeshi Masuda Yusuke Miyaguchi Koukou Suu Shan Sun |
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| Affiliation: | 1. ULVAC Japan, Ltd. 1220–14 Suyama Susono-shi , Shizuoka, 410-1231, Japan;2. Ramtron International Corp. , 1850 Ramtron Drive Colorado Springs, Colorado, 80921, USA |
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| Abstract: | Abstract Ferroelectric SrBi2(Ta, Nb)2O9 (SBTN) thin films were prepared by rf magnetron sputtering utilizing a multi-chamber type production tool (ULVAC CERAUS ZX1000). Accurate and dynamic compositional control results in excellent ferroelectric performances such as large 2Pr up to 15μC/cm2, fatigue free at least 109 cycles as well as good uniformity and process repeatability. These results indicate that the SBTN sputtering process is promising for ferroelectric memory production. |
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| Keywords: | SBTN ferroelectric thin film rf magnetron sputtering process stability uniformity compositional control |
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