Low Temperature PZT Film by MOCVD

Lead Zirconium Titanium Oxide (PZT) thin films were prepared at low temperature using a SMI Metal Organic Chemical Vapor Deposition SpinCVD? tool. Films prepared by this technique were evaluated for multiple device applications. The low temperature PZT film process addresses problems with device manufacture encountered by techniques that rely on high thermal budgets to obtain superior materials properties. Film growth processes were developed based on the following criteria: low defect density, a high necked and dense microstructure, and highly uniform properties across the wafer. The growth process, ferroelectric film properties, and suitability for IR sensing and FRAM applications are discussed.