Depth Profiling of Hydrogen and Oxygen in Ferroelectric Films Using High-Energy Ion Beam |
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| Authors: | T. Kaneko M. Watamori H. Makita C. Araujo G. Kano |
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| Affiliation: | 1. Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosa-Yamada, Kami, Kochi 782-8502, Japan, 046003g@gs.kochi-tech.ac.jp;2. Entrepreneur Engineering, Graduate School, Kochi University of Technology, 185 Miyanokuchi, Tosa-Yamada, Kami, Kochi 782-8502, Japan;3. College of Engineering and Applied Science, University of Colorado at Colorado Springs, 1867 Austin Bluffs Parkway, PO Box 7150, Colorado Springs, CO, 80933-7150 |
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| Abstract: | A characterization technique for oxide ferroelectric materials using high-energy ion beam is presented. In this study, depth profiles of chemical elements are obtained for SBT films grown by MOD method and by MOCVD method respectively. Hydrogen depth profiles are taken by ERD technique with an Al absorber foil. Depth profiles of other elements are determined with RBS technique. For the MOD-grown sample, the elemental amount ratio was determined as Sr1.00Bi2.06 ± 0.03Ta2.02 ± 0.03O8.33 ± 0.17. The oxygen deficiency in the MOD-grown SBT film was uniformly observed at every depths. For the MOCVD-sample and the MOD-sample, the underlying Pt electrode layers contained 4.7 at.% and 3.8 at.% of hydrogen respectively. |
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| Keywords: | RBS ERD hydrogen depth profiling SBT |
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